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Portrait of Professor Jakob Van den Berg Professor Jakob Van den Berg

j.vandenberg@hud.ac.uk | 01484 47TBA



Biography

2011-present Research Professor, University of Huddersfield (joined Oct 2011)

2010–11 Research Professor, University of Salford (p/t); also continuing previous teaching load

2003–10 Professor of Ion Beam Physics, Joule Physics Laboratory, University of Salford

2000–03 Reader, Joule Physics Laboratory, University of Salford

1996–00 Senior Lecturer, Joule Physics Laboratory, University of Salford

1993–96 Senior Lecturer, Dept of Electronic and Electrical Engineering, University of Salford

1986–93 Lecturer, Dept of EEE, University of Salford             

1980–86 Senior Scientific Officer, Dept of Chemistry, UMIST, Manchester

1979–80 Research Fellow, Dept of Electronic and Electrical Engineering, University of Salford

1978–79 Adjunct Lecturer, Institute of Physics, University of Aarhus, DK

1974–78 Research Fellow, Dept of Electronic and Electrical Engineering, University of Salford

Research & Scholarship

  • Ranges, disorder formation & annealing of ultra-low energy implants into Si using medium energy ion scattering (MEIS).
  • The characterisation and metrology of high-k dielectric nano films for microelectronic device applications using MEIS and related high depth resolution analytical techniques.
  • The characterisation of high current ion beam plasma using mass & energy analysis and Langmuir probe.
  • The application of in situ ion beam irradiation in the TEM.

Publications and Other Research Outputs

2014

Van den Berg, J., Bailey, P., Barlow, R., Noakes, T., Kilcoyne, S. and Cywinski, R. (2014) ‘The UK MEIS facility: a new future at the IIAA, Huddersfield’. In: 23rd Conference on Accelerators in Research and Industry, , 25-30 May 2014, San Antonio, Texas, USA

2013

Van den Berg, J., Reading, M., Bailey, P., Noakes, T., Adelmann, C., Popovici, M., Tielens, H., Conard, T., de Gendt, S. and van Elshocht, S. (2013) ‘Medium energy ion scattering for the high depth resolution characterisation of high-k dielectric layers of nanometer thicknessApplied Surface Science , 281, pp. 8-16. ISSN 0169-4332

2012

Hinks, J., Jones, A., Theodosiou, A., Van den Berg, J. and Donnelly, S. (2012) ‘Transmission Electron Microscopy Study of Graphite underin situIon IrradiationJournal of Physics: Conference Series , 371, p. 012046. ISSN 1742-6596

Barlow, R. and Van den Berg, J. (2012) ‘The UK MEIS facility’. In: Proceedings of the Third International Particle Accelerator Conference. New Orleans, Louisiana, USA: JACoW. pp. 4151-4153. ISBN 978-3-95450-115-1

Abrams, K., Hinks, J., Pawley, C., Greaves, G., Van den Berg, J., Eyidi, D., Ward, M. and Donnelly, S. (2012) ‘Helium irradiation effects in polycrystalline Si, silica, and single crystal SiJournal of Applied Physics , 111 (8), pp. 083527-083533. ISSN 0021-8979

Demenev, E., Giubertoni, D., Van den Berg, J., Reading, M. and Bersani, M. (2012) ‘Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 273, pp. 192-194. ISSN 0168-583X

Donnelly, S., Hinks, J., Pawley, C., Abrams, K. and Van den Berg, J. (2012) ‘An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2Journal of Physics: Conference Series , 371, p. 012045. ISSN 1742-6596

2011

Hourdakis, E., Nassiopoulou, A., Parisini, A., Reading, M., Van den Berg, J., Sygellou, L., Ladas, S., Petrik, P., Nutsch, A., Wolf, M. and Roeder, G. (2011) ‘Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , 29 (2), p. 022201. ISSN 1071-1023

Mohacsi, I., Petrik, P., Fried, M., Lohner, T., Van den Berg, J., Reading, M., Giubertoni, D., Barozzi, M. and Parisini, A. (2011) ‘Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted SiThin Solid Films , 519 (9), pp. 2847-2851. ISSN 0040-6090

Hinks, J., Van den Berg, J. and Donnelly, S. (2011) ‘MIAMI: Microscope and ion accelerator for materials investigationsJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films , 29 (2), p. 021003. ISSN 07342101

2010

Sygellou, L., Ladas, S., Reading, M., Van den Berg, J., Conard, T. and De Gendt, S. (2010) ‘A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k filmsSurface and Interface Analysis , 42 (6-7), pp. 1057-1060. ISSN 0142-2421

Bangert, U., Bleloch, A., Gass, M., Seepujak, A. and Van den Berg, J. (2010) ‘Doping of few-layered graphene and carbon nanotubes using ion implantationPhysical Review B , 81 (24), p. 245423. ISSN 1098-0121

Hönicke, P., Beckhoff, B., Kolbe, M., Giubertoni, D., Van den Berg, J. and Pepponi, G. (2010) ‘Depth profile characterization of ultra shallow junction implantsAnalytical and bioanalytical chemistry , 396 (8), pp. 2825-2832. ISSN 1618-2642

Reading, M., Van den Berg, J., Zalm, P., Armour, D., Bailey, P., Noakes, T., Parisini, A., Conard, T. and De Gendt, S. (2010) ‘High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , 28 (1), pp. C1C65-70. ISSN 1071-1023

2009

Parisini, A., Morandi, V., Van den Berg, J., Reading, M., Giubertoni, D., Bailey, P. and Noakes, T. (2009) ‘A Combined Approach to the Determination of As Depth Profiling in Si Ultra Shallow Junctions’. In: MRS 2009 Fall Meeting, 30th November - 4th December 2011, Boston

Kolbe, M., Beckhoff, B., Krumrey, M., Reading, M., Van den Berg, J., Conard, T. and De Gendt, S. (2009) ‘Characterisation of High-k Containing Nanolayers by Reference-Free X-Ray Fluorescence Analysis with Synchrotron RadiationECS Transactions , 25 (3), pp. 293-300. ISSN 1938-5862

Van den Berg, J., Reading, M., Parisini, A., Kolbe, M., Beckhoff, B., Ladas, S., Fried, M., Petrik, P., Bailey, P., Noakes, T., Conard, T. and De Gendt, S. (2009) ‘High Depth Resolution Depth Profile Analysis of Ultra Thin High-? Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPSECS Transactions , 25 (3), pp. 349-361. ISSN 1938-5862

Hourdakis, E., Theodoropoulou, M., Nassiopoulou, A., Parisini, A., Reading, M., Van den Berg, J., Conard, T. and Degendt, S. (2009) ‘Comparison oF Electrical Measurements with Structural Analysis of Thin High-k Hafnium-based FilmsECS Transactions , 25 (3), pp. 363-372. ISSN 1938-5862

Petrik, P., Milita, S., Pucker, G., Nassiopoulou, A., Van den Berg, J., Reading, M., Fried, M., Lohner, T., Theodoropoulou, M., Gardelis, S., Barozzi, M., Ghulinyan, M., Lui, A., Vanzetti, L. and Picciotto, A. (2009) ‘Preparation and Characterization of Nanocrystals using Ellipsometry and X-ray DiffractionECS Transactions , 25 (3), pp. 373-378. ISSN 1938-5862

Van den Berg, J., Reading, M., Armour, D., Carter, G., Zalm, P., Bailey, P. and Noakes, T. (2009) ‘Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in SiRadiation Effects and Defects in Solids , 164 (7-8), pp. 481-491. ISSN 1042-0150

Giubertoni, D., Pepponi, G., Beckhoff, B., Hoenicke, P., Gennaro, S., Meirer, F., Ingerle, D., Steinhauser, G., Fried, M., Petrik, P., Parisini, A., Reading, M., Streli, C., Van den Berg, J., Bersani, M., Secula, E., Seiler, D., Khosla, R., Herr, D., Michael Garner, C., McDonald, R. and Diebold, A. (2009) ‘Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortiumAIP Conference Proceedings , 1173, pp. 45-49. ISSN 0094-243X

Nutsch, A., Beckhoff, B., Altmann, R., Van den Berg, J., Giubertoni, D., Hoenicke, P., Bersani, M., Leibold, A., Meirer, F., Müller, M., Pepponi, G., Otto, M., Petrik, P., Reading, M., Pfitzner, L. and Ryssel, H. (2009) ‘Complementary Metrology within a European Joint LaboratorySolid State Phenomena , 145-14, pp. 97-100. ISSN 1662-9779

2008

Nassiopoulou, A., Gianneta, V., Huffman, M., Reading, M., Van den Berg, J., Tsiaoussis, I. and Frangis, N. (2008) ‘Self-assembled hexagonal ordering of Si nanocrystals embedded in SiO2 nanodotsNanotechnology , 19 (49), p. 495605. ISSN 0957-4484

Conard, T., Franquet, A., Vandervorst, W., Reading, M., Van den Berg, J., Van Elschocht, S., Schram, T., Adelmann, C. and De Gendt, S. (2008) ‘Physical Characterization of the Metal/High-k Layer Interaction upon AnnealingECS Transactions , 16 (5), pp. 433-442. ISSN 1938-5862

Parisini, A., Morandi, V., Solmi, S., Merli, P., Giubertoni, D., Bersani, M. and Van den Berg, J. (2008) ‘Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopyApplied Physics Letters , 92 (26), p. 261907. ISSN 0003-6951

Saheli, G., Conti, G., Uritsky, Y., Foad, M., Brundle, C., Mack, P., Kouzminov, D., Werner, M. and Van den Berg, J. (2008) ‘Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scatteringJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , 26 (1), pp. 298-304. ISSN 1071-1023

2005

Werner, M., Van den Berg, J., Armour, D., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Ottaviano, L., Bongiorno, C., Mannino, G., Bailey, P. and Noakes, T. (2005) ‘Shallow BF[sub 2] implants in Xe-bombardment-preamorphized Si: The interaction between Xe and FApplied Physics Letters , 86 (15), p. 151904. ISSN 0003-6951

2004

Werner, M., Van den Berg, J., Armour, D., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Bailey, P. and Noakes, T. (2004) ‘The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2Materials Science and Engineering: B , 114-11, pp. 198-202. ISSN 0921-5107

Werner, M., Van den Berg, J., Armour, D., Van Der Vorst, W., Collart, E., Goldberg, R., Bailey, P. and Noakes, T. (2004) ‘Damage accumulation and dopant migration during shallow As and Sb implantation into SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 216, pp. 67-74. ISSN 0168-583X

2002

Van den Berg, J., Armour, D., Zhang, S., Whelan, S., Werner, M., Collart, E., Goldberg, R., Bailey, P. and Noakes, T. (2002) ‘Damage and Dopant Profiles Produced by Ultra-Shallow Boron And Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering.MRS Proceedings , 717. ISSN 1946-4274

Van den Berg, J., Armour, D., Zhang, S., Whelan, S., Ohno, H., Wang, T., Cullis, A., Collart, E., Goldberg, R., Bailey, P. and Noakes, T. (2002) ‘Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperaturesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , 20 (3), p. 974. ISSN 0734-211X

2001

Van den Berg, J., Zhang, S., Whelan, S., Armour, D., Goldberg, R., Bailey, P. and Noakes, T. (2001) ‘Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 183 (1-2), pp. 154-165. ISSN 0168-583X

2000

Whelan, S., Armour, D., Van den Berg, J., Goldberg, R., Zhang, S., Bailey, P. and Noakes, T. (2000) ‘Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ionsMaterials Science in Semiconductor Processing , 3 (4), pp. 285-290. ISSN 1369-8001

Zalm, P., Van den Berg, J., van Berkum, J., Bailey, P. and Noakes, T. (2000) ‘Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?Applied Physics Letters , 76 (14), pp. 1887-1889. ISSN 0003-6951

1997

Hatzopoulos, N., Suder, S., Van den Berg, J., Panknin, D., Fukarek, W., Donnelly, S., Cook, C., Armour, D., Lucassen, M., Frey, I., Foad, M., England, J., Moffatt, S., Bailey, P., Noakes, T. and Ohno, H. (1997) ‘Range and damage distributions in ultra-low energy boron implantation into silicon’. In: Ion implantation technology--96: proceedings of the Eleventh International Conference on Ion Implantation Technology. : Institute of Electrical and Electronics Engineers. pp. 527-530. ISBN 9780780332898

Esteem

  • Scientific Committee, Workshop on Ultra shallow Junction Formation, November, Trento (I) (2004)
  • Organising Committee IBA 2009 Conference, Cambridge, UK (Sept 2009)
  • Organising Committee NASM Conference Manchester (April 2010)
  • Scientific Committee EMRS Fall Conference Session Warsaw (2012)

Research Degree Supervision

Medium energy ion scattering (MEIS) for the high depth resolution analysis of shallow implants and high–k dielectric nano layers. The characterisation of beam plasmas using mass/energy analysis and probe analysis

Past PhD Project titles:

  • The application of MEIS for the physical characterisation of high-k ultra-thin dielectric layers in microelectronic devices.
  • Damage formation and annealing studies of low energy implants in silicon using medium energy ion scattering.
  • Study of silicon damage caused by ultra low energy boron implantation.
  • Investigation of space charge neutralisation effects in high-current positive ion beams.

Enterprise Activities

Teaching Company In 1995, jointly with Prof Dave Armour, I was awarded a DTI funded Teaching Company Scheme, together with Applied Materials, Horsham (UK) and after Prof Armour’s retirement in 1997, responsible for its management. It involved the development of sophisticated beam characterisation equipment that has yielded vital information on the factors limiting high current low energy ion beam transport and has contributed to new ion source developments. Providing university and industrially based training for 2 RA’s, both of whom have subsequently become key Applied Materials R&D personnel, this project was completed early 2000, and received the highest possible evaluation, (grade 1) and a TCS Certificate of Excellence.

Funding Development of low energy ion beam technology, (TCS with Applied Materials, Horsham (‘95–‘00) DTI/EPSRC, £ 120k 

Industrial R&D funding from Applied Materials. The project involved the construction of an extension to the Salford low energy implanter and the subsequent measurement of charge exchange cross sections of ion species relevant to low energy ion implanters which have yielded unique data.

Funding “Charge exchange studies”, Applied Materials (1999-2001 & 2003-05) £100 k.

Consultancy Feasibility study of multi-aperture ion source, involving ion source modification and testing.

Funding: Applied Materials (2002) £ 2k

Consultancy Retained as a R&D Consultant by VSW Scientific Instruments from 1986–90, I designed and developed a low pressure discharge ion gun (AS10/20 – more than 25 units sold), a duoplasmatron micro-focussed ion gun beamline (6 systems sold) and independent movement 2-axes goniometers for ARXPS/UPS. Also made substantial contributions to the design and construction of two large (> £500k) low energy beam systems for ion beam deposition studies, supplied to JAERI (Japan) and University of Texas (USA). Return for the University was primarily in the form of providing research student support and donation of equipment (£30k).

Consultancy As a spin-off of my PhD research, I designed two UHV compatible high-precision, 3- and 2-axes sample goniometers, later commercially licensed for manufacture to Panmure Instruments Ltd of Newbury (Berks) by SUBS. Over the last three decades in excess of 20 instruments have been sold. I am retained by Panmure as a consultant.

Patents Holder of 2 patents in conjunction with collaborators at Applied Materials.

Equipment donation As a result of the long term R&D relationship with Applied Materials, the group at Salford has acquired Applied’s PLUTO research ion implanter (estimated value £ 500 k) free of charge in 2001. This machine’s ion optics are equivalent to a modern commercial implanter. This system has been made fully operational aided by a £ 3.5k RIF grant awarded by the University of Salford, to fund a Senior Experimental Officer to assist in its rebuilding. It was used for PhD research on the physics of ion beam beam plasma formation and characterisation and low energy beam transport and further R&D funding from Applied Materials was been obtained in 2006 (£ 12k).

Commercial Contracts with US based semiconductor companies for MEIS analysis of ultra low energy As and B implants, attracted on the basis of research publications £ 4.3 k (2004). Further commercial work was secured in 2011 and channelled directly to Daresbury Lab. (£ 6k)

Teaching and Professional Activities

Research appointment - however will be teaching on the MSc in Accelerator Science starting in October 2012

Last updated Thursday 6 March 2014
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